VE311 Electronic Circuit HW3

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VE311 Electronic Circuit HW3

Due: Jun 11th 11:59 a.m.

Note

1.  Please use A4 size paper or page.

2.  Please clearly state your final result for each question.

3.  Please state and verify the operating region (cutoff, FAR/active, or saturation) of each BJT.

Problem 1

An npn transistor of a type whose β  is specified to range from 50 to 300 is connected in a circuit with emitter grounded, collector at +10 V, and a current of 10 µA injected into the base. Calculate the range of collector and emitter currents that can result.  What is the maximum power dissipated in the transistor?

(Note:  Perhaps you can see why this is a bad way to establish the operating current in the collector of a BJT.)

Problem 2

A very simple circuit for measuring β of an npn transistor is shown in Fig 1.  In a particular design, VCC   is provided by a 9-V battery; M is a current meter with a 50-µA full scale and relatively low resistance that you can neglect for our purposes here.  Assuming that the transistor has VBE =0.7 V at IE =1mA, what value of RC  would establish a resistor current of 1 mA? Now, to what value of β does a meter reading of full scale correspond?  What is β if the meter reading is 1/5 of full scale?  1/10 of full scale?

Problem 3

For the circuit in Fig 2, find VB  and VE  for vI  = 0V, +2V,–2.5V, and –5V. The BJTs have β=50.

Problem 4

For the circuit shown in Fig. 3, find the labeled node voltages for:

(a) β = ∞;

(b) β = 100;


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